发明名称 Ion implanter scanning mechanism.
摘要 <p>An ion beam scanning method and apparatus produce a parallel, scanned ion beam with a magnetic deflector having, in one instance, wedge-shaped pole pieces that develop a uniform magnetic field. A beam accelerator for the scanned beam has a slot-shaped passage which the scanned beam traverses. The beam scan and the beam traverse over a target object are controlled to attain a selected beam current and corresponding ion dose on a target object. Methods and apparatus are disclosed for increasing ion beam utilization efficiency without adversely effecting dose accuracy.</p>
申请公布号 EP0431757(A2) 申请公布日期 1991.06.12
申请号 EP19900312160 申请日期 1990.11.07
申请人 VARIAN ASSOCIATES, INC. 发明人 BERRIAN, DONALD W.;KAIM, ROBERT E.;VANDERPOT, JOHN W.
分类号 H01L21/265;C23C14/48;H01J37/147;H01J37/317 主分类号 H01L21/265
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