| 摘要 |
PURPOSE:To form a pattern in a substrate with a part having high reflectance and a part having low reflectance in accordance with designed dimensions by using a photomask differently corrected at parts corresponding to the part of the substrate having high reflectance and the part having low reflectance. CONSTITUTION:The pattern of a photomask is transferred by projection exposure to a resist on a substrate with a part having high reflectance and a part having low reflectance, the resist is developed to form a resist pattern and a desired pattern is formed in the base material by etching. At this time, the photomask is previously corrected to the designed dimensions of a pattern after etching so that a part corresponding to the part of the substrate having high reflectance is made larger than a part corresponding to the part having low reflectance by prescribed dimensions because the resist on the part having high reflectance is exposed in excess and the width of resist lines is reduced. |
