发明名称 |
High efficiency charge pump circuit |
摘要 |
An integrated circuit device includes a charge pump to provide current at a potential which is greater than a supply potential. A potential maintenance circuit gates on when the potential at the output of the charge pump circuit drops to a level which is below VCC. The potential maintenance circuit permits the charge pump can be bypassed or designed to provide a minimum current output. An overvoltage shutoff circuit permits the charge pump to be effectively bypassed when supply voltage is sufficiently high to make bypass desireable.
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申请公布号 |
US5023465(A) |
申请公布日期 |
1991.06.11 |
申请号 |
US19900498772 |
申请日期 |
1990.03.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DOUGLAS, KURT P.;CHERN, WEN-FOO |
分类号 |
G05F3/20;G11C5/14;G11C11/4074;H02M3/07 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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