发明名称 High efficiency charge pump circuit
摘要 An integrated circuit device includes a charge pump to provide current at a potential which is greater than a supply potential. A potential maintenance circuit gates on when the potential at the output of the charge pump circuit drops to a level which is below VCC. The potential maintenance circuit permits the charge pump can be bypassed or designed to provide a minimum current output. An overvoltage shutoff circuit permits the charge pump to be effectively bypassed when supply voltage is sufficiently high to make bypass desireable.
申请公布号 US5023465(A) 申请公布日期 1991.06.11
申请号 US19900498772 申请日期 1990.03.26
申请人 MICRON TECHNOLOGY, INC. 发明人 DOUGLAS, KURT P.;CHERN, WEN-FOO
分类号 G05F3/20;G11C5/14;G11C11/4074;H02M3/07 主分类号 G05F3/20
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