Method of producing electrically isolated semiconductor devices on common crystalline substrate,申请号US19680725223-传众专利搜索

发明名称	Method of producing electrically isolated semiconductor devices on common crystalline substrate
摘要	Semiconductor segments are embedded in a crystalline substrate. Each of the segments are insulated from each other and from the substrate so that they can be used in fabricating semiconductor devices.
申请公布号	US4139401(A)	申请公布日期	1979.02.13
申请号	US19680725223	申请日期	1968.04.26
申请人	ROCKWELL INTERNATIONAL CORPORATION	发明人	MCWILLIAMS, DONALD A.;FA, CHARLES H.;LARCHIAN, GEORGE A.;MAXWELL, JR., ORAL F.
分类号	H01L21/00;H01L21/306;H01L21/308;H01L21/314;H01L21/318;H01L21/762;H01L23/29;H01L27/00;(IPC1-7):H01L21/76;H01L27/12	主分类号	H01L21/00
代理机构		代理人
主权项
地址