| 摘要 |
PURPOSE:Not to bequeath any residue of etching process at all for avoiding the scattering of the residue so that such a defect as a short circuit, disconnection may be hardly developed thereby enabling the manufacturing yield to be enhanced by a method wherein the title manufacture comprises three steps to form the first, second and third films. CONSTITUTION:The title manufacture of a semiconductor device having a mark pattern used for alignment, inspection, etc., comprises three steps as follows; first step to form a first film 4 for providing a part on a device region (a) with the first mark pattern 5, second step to form a second film 7 for covering the first mark pattern 5 or the boundary 11 between the device region (a) and a scribe region (b) or both of them further having the second mark pattern 9 on the part other than the part on the first mark pattern 5 and third step to form a third film 10 for covering the second mark pattern 9 or the boundary 11 between the device region (a) and the scribe region (b) or both of them. For example, the second film 7 and the third film 10 are specified respectively to be an interlayer insulating film and an Al wiring film. |
