发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To make the transistor control changeover signal to be an arbitrary level by making the output of a logic synthesis circuit, which takes the logic of a transistor control signal and an output signal of a cell transistor that can be written in/erased, to be a transistor control changeover signal. CONSTITUTION:A cell transistor 1 which can be written in/erased, and a logic synthesis circuit 10, which consists of a NAND gate 12 for taking the logic of the output signal 6 of the transistor 1 and a transistor control signal 9 and an inverter 13, are provided. The output of the logic synthesis circuit 10 is used as a transistor control changeover signal 11. Then, the level of the transistor control signal 9 can be changed in accordance with the state of the cell transistor 1. Thus, the level of the transistor control changeover signal 11 can be selected to be an arbitrary level.</p>
申请公布号 JPH03132998(A) 申请公布日期 1991.06.06
申请号 JP19890270888 申请日期 1989.10.17
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 GOTO HIROYOSHI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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