Exposing workpiece by electron beam lithography - separating structure elements into surface elements in predetermined window area of pattern

摘要

The exposure occurs according to a given pattern (11) with overlapping structures elements (12). Within a given window area (13) of the pattern, the structure elements are divided into surface elements fully covering the structures elements contained in the window area. Each surface element is subjected to an optimum exposure dose by iteraction. The latter is calculated through minimising deviation between the calculated charge distribution and a predetermined target charge distributions at given points in the sense of a norm. The exposure of the workpiece, provided with an electron-sensitive lacquered layer, occurs within the set window area. An optimum exposure dose is given for each surface element. A predetermined exposure dose is given to each structure element USE/ADVANTAGE - Semiconductor wafer with photo lacquer layer. Metal structure, e.g. of chrome, structured for use as exposure mask in optical lithography. Avoids underexposure of edges and corners of structures reliably in reasonable time.