Improved process for selective deposition of tungsten on semiconductor wafer.

摘要

A process and apparatus for the selective deposition of tungsten or similar materials on a masked semiconductor wafer (100) comprises cleaning the surfaces of the wafer (100) in an air-tight cleaning chamber (10), then transferring the cleaned wafer to a vacuum deposition chamber (40) such as a CVD chamber for selective deposition of tungsten etc. thereon without exposing the cleaned wafer (100) to conditions which would recontaminate the cleaned wafer (100) prior to said deposition, and then selectively depositing tungsten etc. on the unmasked surfaces of the cleaned wafer (100).