Process and apparatus for forming stoichiometric layer of metal compound by closed loop voltage controlled reactive sputtering.

摘要

Process and apparatus are disclosed for forming a layer of a stoichiometric metal compound on a semiconductor wafer (70) by reactive sputtering a metal target (30) in a chamber (10) in the presence of a reactive gas wherein the negative potential on said metal target (30) is increased or decreased to change the supply of sputtered metal atoms available to react with the atoms of the reactive gas at a fixed flow of the gas by resetting the power level of a constant power source (40) electrically connected to the target (30) and a path (126, 132, 138) is provided for the flow of reactive gas to the zone (100) between the target (30) and the wafer (70), while restricting the travel of the stoichiometric metal compound being formed from the zone (100) to thereby provide a stoichiometric ratio of sputtered metal atoms and reactive gas atoms adjacent the wafer (70) to form the stoichiometric metal compound on the wafer (70). <IMAGE>