| 摘要 |
An integral solder back contact is provided over a semiconductor circuit. The solder contact includes a pair of layers which form an alloy at elevated temperatures. A semiconductor device having the integral solder back contact is mounted on the carrier and disposed at an elevated temperature which causes one of the layers to melt. The material of the other layer is dissolved in the melted layer until such melted layer has a sufficient amount of the material of the other layer dissolved therein to form an alloy which hardens. After the alloy hardens the circuit is firmly bonded to the carrier even while the carrier is exposed to the elevated temperature.
|
