| 摘要 |
PURPOSE:To prevent that a potential between a lead and a reference potential becomes a prescribed value or higher even when a metal member comes into contact with a tape face and a lead face and to prevent an electrostatic breakdown of a semiconductor chip by a method wherein a reference potential of the chip is decided in advance via an interconnection pattern for reference- potential supply use. CONSTITUTION:An opening part 18 into which an LSI chip 13 is inserted is opened in advance in each lead pattern region 12 of a tape 11. The LSI chip 13 is inserted into the opening part 18; a plurality of electrode pads 17,... formed on the surface of the chip 13 and a plurality of leads 14 in the lead pattern region 12 are connected by a thermocompression bonding method or the like; the LSI chip 13 is inner-lead-bonded to the lead pattern region 12. The individual leads 14 are fixed to the tape 11 by using an adhesive 19. A reference potential is supplied to each LSI chip 13,... via an interconnection pattern 15 for reference-potential supply use and via individual leads 14A for reference-potential supply use; a high voltage applied to the leads is made to escape to the reference potential through an internal circuit of each LSI chip 13,.... |
