| 摘要 |
PURPOSE:To shorten a manufacturing process by a method wherein a MOS transistor of stacked gate structure is used as a memory cell, and data are written in at a time by the selective irradiation of ultraviolet rays before a sealing and assembling process. CONSTITUTION:A floating gate 4 and a control gate 6 are provided onto the primary surface of a semiconductor substrate 1 to form a MIS field effect transistor, and cells formed of the MISFET transistors are arranged in matrix. As a positive voltage is applied on the control gate 6 of the memory cell, the memory cell matrix is selectively irradiating with ultraviolet rays using a mask 8 of a pattern required to be stored to inject electrons into the floating gate 4 of the prescribed cell to write data. By this setup, a memory device of this design can be shortened in manufacturing process. |
