MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT SUBSTRATE,申请号JP19890266665-传众专利搜索

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发明名称	MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT SUBSTRATE
摘要
申请公布号	JPH03127833(A)	申请公布日期	1991.05.30
申请号	JP19890266665	申请日期	1989.10.13
申请人	FUJITSU LTD	发明人	TAKIZAWA RITSUO
分类号	H01L21/306	主分类号	H01L21/306
代理机构		代理人
主权项
地址

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