Static semiconductor memory device with predetermined threshold voltages

摘要

A high resistance/load type memory cell of a static semiconductor memory device includes two load elements, two driver transistors, and two access transistors. The threshold voltage of each driver transistor is set at a high value so that the OFF resistance value of the driver transistor is 10 to 100 times the resistance value of each load resistance. The threshold voltage of each access transistor is set to be lower than the threshold voltage of each driver transistor so that the OFF resistance value of the access transistor is twice to 10 times the resistance value of each load resistance. Thus, power consumption in a standby state is reduced, while data holding characteristics of the memory cell are stabilized in selected and non-selected states.