| 摘要 |
<p>PURPOSE:To assure the adhesive property by a method wherein, when a protecting film is expanded on a semiconductor substrate and an opening is provided to adhere a beam.lead type electrode on an exposed internal electrode pad by means of the lift off method, the applicable photoresist for opening pad hole and said protecting film thereunder are used as the spacer for liftoff. CONSTITUTION:An internal element wiring 22 comprising Al including a pad as outgoing electrode is formed on a semiconductor substrate 21 including the diffusion area and the thermal oxide film and the entire surface of the said wiring 22 is covered with a protecting film 23. Then a photoresist film 24 is provided with sufficient thickness for a masking material in case of forming a liftoff wiring later to form an opening on said film 23 corresponding to the said pad. Then said film 23 is removed by etching making use of this thick film 24 as a masking material and an opening 13a is provided whereupon a beam lead type electrode comprising Ti layer 25, Pt layer 26 and Au layer 27 is laminated and formed into the pad of the exposed wiring 22.</p> |
