| 摘要 |
PURPOSE:To obtain a semiconductor device of high integration degree whose manufacturing process is short, by using a high melting point metal film for connecting a diffusion layer and a semiconductor wiring layer. CONSTITUTION:The title device is provided with the following; the opposite conductivity type diffusion layer 5 having a contact part 6 in a part of a surface formed selectively on the upper layer of one conductivity type semiconductor substrate 1, one conductivity type semiconductor wiring layer 3 formed on the semiconductor substrate 1 surface via a semiconductor insulating film 2, a connection part 7 of which layer 3 is adjacent to the above contact part 6, and a metal connection wiring layer 9 formed on the contact part 6 and the surface of the connection part 7. In this semiconductor device, the metal connection wiring layer 9 is constituted of high melting point metal. For example, by the selective CVD method, a tungsten connection wiring layer 9 of about 200nm in thickness is selectively grown on the surface of an aperture 8 exposing silicon; the contact part 6 of the P-type diffusion layer 5 and the connection part 7 of the N-type polycrystalline silicon wiring layer 3 are wired. |
