发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SYSTEM
摘要 An improved semiconductor device manufacturing system and method is disclosed in which undesirable sputtering can be averted by virtue of the combination of an ECR system and a CVD system. Prior to the deposition of a semiconductor layer by the ECR/CVD combination, a sub-layer can be formed on a substrate in a reaction chamber and transported to another chamber for deposition to be effected according to the ECR/CVD combination without the substrate being exposed to contact with air, so that a semiconductor junction thus formed has good characteristics. <IMAGE>
申请公布号 KR910003171(B1) 申请公布日期 1991.05.20
申请号 KR19900011462 申请日期 1990.07.27
申请人 SEMICONDUCTOR ENERGY LABORATORY 发明人 YAMAZAKI SUNPEY
分类号 C23C16/511;C23C16/54;H01L21/00;H01L21/205;(IPC1-7):H01L21/203 主分类号 C23C16/511
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