发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SYSTEM |
摘要 |
An improved semiconductor device manufacturing system and method is disclosed in which undesirable sputtering can be averted by virtue of the combination of an ECR system and a CVD system. Prior to the deposition of a semiconductor layer by the ECR/CVD combination, a sub-layer can be formed on a substrate in a reaction chamber and transported to another chamber for deposition to be effected according to the ECR/CVD combination without the substrate being exposed to contact with air, so that a semiconductor junction thus formed has good characteristics. <IMAGE> |
申请公布号 |
KR910003171(B1) |
申请公布日期 |
1991.05.20 |
申请号 |
KR19900011462 |
申请日期 |
1990.07.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY |
发明人 |
YAMAZAKI SUNPEY |
分类号 |
C23C16/511;C23C16/54;H01L21/00;H01L21/205;(IPC1-7):H01L21/203 |
主分类号 |
C23C16/511 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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