发明名称 |
Process for the production of an inverted structure, active matrix display screen |
摘要 |
Process for producing a wall for an active matrix display screen. By a first etching is formed stack rows of layers (L) with a metal at the bottom. The gaps between the rows are filled by a negative polyimide. On the surface are etched columns (C) and blocks (P). These elements serve as a mask for an etching leaving control transistors in a gate configuration below the same. Application to the production of liquid crystal display screens.
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申请公布号 |
US5015597(A) |
申请公布日期 |
1991.05.14 |
申请号 |
US19900573340 |
申请日期 |
1990.08.24 |
申请人 |
CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS ET D'ETUDES SPATIALES |
发明人 |
VINOUZE, BRUNO;CHOUAN, YANNICK |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;G09F9/35;H01L21/20;H01L21/336;H01L21/84;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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