发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent any harmful impurity from diffusing by providing a plurality of insulating films each having opening parts therethrough without permitting the opening parts of the adjacent upper and lower insulating films to be superimposed one on the other, and inserting a high impurity concentration semiconductor layer therebetween. CONSTITUTION:A current produced in semiconductor layers 5, 6 flows in a high impurity concentration semiconductor layer 3 through opening parts formed through insulating films 2, 4, and reaches a conductive substrate 1. Although any harmful impurity involved in the substrate 1 diffuses from the opening part of the film 2 into the layer 3, the harmful impurity is prevented from diffusing up to the layer 5 by the film 4 provided between the layers 3 and 5 such that its opening part is not superimposed on the opening part of the film 2. Accordingly, the layers 5, 6 are prevented from being contaminated by the impurities in the substrate 1, and hence characteristics as a solar cell is not lowered.
申请公布号 JPH03108380(A) 申请公布日期 1991.05.08
申请号 JP19890245936 申请日期 1989.09.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 DEGUCHI MIKIO
分类号 H01L31/04 主分类号 H01L31/04
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