发明名称 RF transistor package with nickel oxide barrier.
摘要 <p>An improved transistor package with superior stability to wave soldering, has a barrier of nickel oxide in proximity to, and encircling, the active region, thereby preventing solder from penetrating the epoxy/cap interface. This barrier is formed by placing a photoresist material over nickel or nickel-plated leads prior to gold plating. A narrow ring or annulus of nickel without gold plating then surrounds the active area. This unplated region is oxidized during assembly of the package, creating the nickel oxide barrier, and a cap sealed to the ring area with epoxy. The nickel oxide barrier resists migration of solder, thereby maintaining the integrity of the package.</p>
申请公布号 EP0426284(A1) 申请公布日期 1991.05.08
申请号 EP19900309524 申请日期 1990.08.30
申请人 SGS-THOMSON MICROELECTRONICS, INC. 发明人 BUTERA, GASPAR A.
分类号 H01L23/04;H01L21/48;H01L23/02;H01L23/10;H01L23/66;H01L27/12 主分类号 H01L23/04
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