| 摘要 |
PURPOSE:To achieve a low loss of a semiconductor rectifier diode by specifying the following: an interval between third stripe-shaped semiconductor regions; their depth; and a width of a depletion layer formed between a first semiconductor region and the third semiconductor regions. CONSTITUTION:A semiconductor substrate 1 is provided with the following: a first n-type semiconductor region 13 adjacent to the surface 11; a second n<+> type semiconductor region 14 adjacent to the main surface 12 on the other side; and a plurality of third p<+> type stripe-shaped semiconductor regions 15. A mutual interval between the third semiconductor regions 15 is designated as W; a depth of the third semiconductor regions 15 is designated as Di a width of a depletion layer which is spread to the side of the first semiconductor region 13 by a diffusion potential of a p-n junction J formed between the first semiconductor region 13 and the third semiconductor regions 15 is designated as w0. Then, the third semiconductor regions 15 are formed so as to satisfy a relationship of 2wo<W<=3D. By this constitution, a surface field strength on the semiconductor side of a Schottky junction and a reverse leakage current are reduced sharply, and a low loss can be achieved. |
