| 摘要 |
PURPOSE:To prevent the trouble caused by the breaking of wire on the upper wiring of the subject semiconductor device without adding a specific process for that purpose by a method wherein an interlayer insulating film, consisting of a metal compound, is formed in such a manner that the film has a low density as it is parted away from the underlying wiring layer, and a contact hole is formed by etching. CONSTITUTION:For example, a first wiring layer 42 is formed on a GaAs substrate 41, and a nitride film (or an oxide film) 43, for example, is formed on the layer 42 using a decompression CVD method. This nitride film is deposited in such a manner that it has low density on the surface side by slowly reducing the quantity of flow of reaction gas SiH4 (or RF power, or the pressure at the time of reaction), for example. Then, an etchin is performed by providing a resist mask 47, for example, and after a contact hole 44 having a gently-sloped section has been formed, the second upper wiring layer 46 is formed, and the wirings are connected. Accordingly, the breaking of wire of the wirings on the upper layer at the contact hole 44 can be prevented by merely changing the condition of the CVD film formation, thereby enabling to increase the reliability of the device. |
