| 摘要 |
<p>PURPOSE:To form a source region in a self-alignment manner with respect to the pattern of a gate electrode with fine pattern size by boring a trench, which is penetrated into the source region and reaches a well and the inside of which is wider than an opening section thereof, in the connecting sections of a source electrode, the source region of the source electrode and the well. CONSTITUTION:A trench 13 being penetrated into an N<+> source region 5 and reaching a P well 2 is bored in a connecting section in which a source electrode 12 is connected in common with the N<+> source region 5 and the P well 3. As for the trench 13, the inside is formed so as to be overhung in the lateral direction, and the inside is shaped in size wider than an opening section. The N<+> source region 5 is formed in a shape that it is left at the eave section of the upper section of the side wall by forming such a trench 13. The source electrode 12 composed of Al-Si, etc., is connected in common with the N<+> source region 5 through a conductor 14 consisting of the side wall of doped poly Si and through a P<+> well contact region 4 with the P well 3.</p> |
