Semiconductor device has a crystalline silicon semiconductor substrate and an Au doping for charge carrier lifetime redn., the novelty being that the Au doping has a structured profile which is limited in the axial direction so in an axially limited region, it shows an over-proportional steep droo compared with an undisturbed Au diffusion profile. Prodn. of the device involves (a) introducing a Rh doping in the axially limited region; and (b) diffusing an Au doping from a first main face of the substrate so Au-doping and Rh-doping overlap at least in the axially limited region. ADVANTAGE - Axially structured charge carrier lifetime profiles can be produced by diffusion methods.
