| 摘要 |
PURPOSE: To almost perfectly manufacture a capacitor in an existing manufacturing process, by, after a source and a drain regions are partially exposed, providing a metal layer, partially converting to a metal silicide, and forming a second capacitance electrode and a connection electrode of a source and a drain regions of the metal layer. CONSTITUTION: A gate electrode 34 of a transistor and a first capacitance electrode 21 of a capacitor are formed of a silicon layer. Then, a relatively thicker silicon oxide layer is deposited and anisotropically etched on an assembly, so that only an edge part 11 positioned along the gate electrode 34 and the first capacitance electrode 21 remains. Then, thermal processing is performed, and an injection impurity is further diffused in a semiconductor main body, so that a source region 31 and a drain region 32 of a transistor are formed on both sides of the gate electrode. Then, with a slight etching process, the source and the drain regions 31 and 32 are exposed, then the assembly is coated with a titan layer. The titan layer 12 is separated from the first capacitance electrode 21 by a silicon oxide layer 20. Then, through a thermal process, the titan layer 12 is converted into a titan-silicide. The second capacitance electrode 22, a source electrode 35, and a drain electrode 36 are formed from the titan silicide in a single manufacturing process. |
