| 摘要 |
A multiple-imaging charged particle-beam exposure system includes a charged particle beam source, and a screen lens having lens apertures therein. A charged particle beam is emitted from the charged particle beam source. A beam emerging from each of the lens apertures of the screen lens is irradiated on an object to be exposed, to effect exposure on the object. An image forming electrode is interposed between the screen lens and the object for focusing beams emerging from the screen lens to form images at the image forming electrode. An acceleration/deceleration correcting lens is interposed between the image forming electrode and the object for limiting divergency of the images formed at the image forming electrode. A bias voltage controller applies a bias voltage relative to a potential at the image forming electrode to a surface of the object. Alternatively, a beam limiting aperture plate having beam limiting apertures therein is interposed between the charged particle beam source and the screen lens. A deflector, is interposed between the beam limiting aperture plate and the screen lens, individually deflects charged particle beams emerging from the beam limiting apertures. Alternatively, a limiting aperture shapes the charged particle beam emitted from the charged particle beam source. A drawing electrode takes out the charged particle beam via the limiting aperture, and a deflector deflects the charged particle beam. An Einzel lens is interposed between the drawing electrode and the deflector.
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