| 摘要 |
PURPOSE:To improve the resolution of contact holes and to reduce the chip size of an LSI by using a resist material prepd. by adding a surfactant into a resist in such a manner that the concn. of the developing soln. brought into contact with a resist film at the time of development attains 1.1 to 1.2CMC. CONSTITUTION:The resist material prepd. by adding the surfactant into the resist in such a manner that the concn. of the developing soln. brought into contact with the resist film 11 attains 1.1 to 1.2CMC is used at the time of the development of the resist film. Namely, the surface tension in the patterns 12 of the resist is decreased sharply and the solubility is improved during the development of the contact holes patterns 12 at the time of the development of the resist film 11. The operation of the solubility is enabled by previously preparing the resist material by adding the surfactant into the resist in such a manner that the concn. of the developing soln. brought into contact with the resist film 11 attains 1.1 to 1.2CMC. Thus, the pattern resolution of the contact holes of the resist is improved and the chip size is reduced. |
