| 摘要 |
<p>PURPOSE:To enhance conversion efficiency and enable production to be performed easily by forming a light-emitting element and a photodetector on a semiconductor substrate and by forming a semiconductor by direct junction. CONSTITUTION:An insulating film 2 is formed on a silicon substrate 1, the insulating film 2 and a semiconductor substrate 3 are joined by direct junction, an insulating film 36 is further formed on the semiconductor substrate 3, the insulation film 36 and a semiconductor substrate 4 are directly joined by direct junction, a photodetector element is formed on the semiconductor substrate 3, a light-emitting element is formed on the semiconductor substrate 4, or inversely a light-emitting element is formed on the semiconductor substrate 3, a photodetector is formed on the semiconductor substrate 4, and a transistor 6 which amplifies electrical signal converted by the photodetector and a transistor 6 which drives the light-emitting element are formed on the silicon substrate 1, the semiconductor substrate 3, or the semiconductor substrate 4. Thus, use of the semiconductor substrate achieves an improved crystallinity of semiconductor and enhances light/electron conversion efficiency of light-emitting element or photodetector which are formed on that semiconductor.</p> |
