| 摘要 |
<p>PURPOSE:To enhance the mounting density by a method wherein a dielectric sheet is pasted on the rear of an IC chip and the rear is used as a capacitor CONSTITUTION:A semiconductor capacitor element 3 of a grain-boundary type is pasted on the rear of a DRAM chip 1 via an Ag paste 2. In addition, a lead frame 5 is pasted via an Ag paste 4; a dielectric layer provided with a capacitor for bypass use is obtained on the rear side of the chip 1. A VSS of the chip 1 is connected to the frame 5 by using a bonding wire 6. Then, the capacitor for bypass is formed on the rear side of the chip 1; the mounting density is enhanced sharply; dielectric loss as viewed from the chip 1 is reduced. Thereby, a composite electronic component provided with the capacitor can be obtained easily.</p> |
