发明名称 REFLECTION TYPE X-RAY MASK FOR FORMING PATTERN
摘要 PURPOSE:To improve an exposure efficiency and to also improve mechanical strength of a mask by comparatively disposing a region indicating a relatively high reflectivity in a predetermined direction to an incident X-ray and a region indicating a low reflectivity on an incident X-ray incident surface in response to an original pattern. CONSTITUTION:A region 12a indicating a relatively high reflectivity in a predetermined direction to an incident X-ray Ii and a region 13a indicating at least low reflectivity are comparatively disposed on an incident X-ray Ii incident surface 12 in response to an original pattern. In formation of the pattern is placed on the X-ray Ir in the predetermined direction, and a pattern responsive to the pattern is obtained on an object 14 placed in an optical path of the X-ray Ir. For example, a substance layer 13 of carbon or the like having X-ray absorptive power exhibiting low reflectivity to the X-ray Ii is disposed on the surface 12 of a molybdenum substrate 11 of a mirror-finished surface. In which king of comparison relation the regions 13a and 12a are disposed in a plane shape is determined in response to the pattern.
申请公布号 JPH0396220(A) 申请公布日期 1991.04.22
申请号 JP19890233327 申请日期 1989.09.08
申请人 SEIKO EPSON CORP 发明人 IWAMATSU SEIICHI
分类号 G03F1/22;G03F1/24;G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/22
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