| 摘要 |
<p>A semiconductor device fabrication process in which the features of a composite mask are transferred to a first covering on a surface of a semiconductor bulk, the first covering is etched to provide windows for the introduction of impurities into the semiconductor bulk, and selected windows in the first covering are masked by a second covering differing in composition from the first covering, to facilitate the introduction of impurities through open windows in the first covering into the semiconductor bulk.</p> |
