Integratable temp. sensor circuit - has circuit complementary to current mirror circuit contg. two FETs with reference potential node

摘要

The sensing unit has a first current-mirror circuit with two FETs of a first conducting type (M1,M2), the sources being connected to a potential supply node point (8) and the drains to a first and a second node points (1,2). A second circuit, complementary to the first, has third and a fourth FETs (M3,M4) of a second conducting type, with the drains connected to the nodes (1,2) and the sources to a third and a fourth node point (3,4). A first resistance (R2) is connected to the fourth node and toa second potential supply poinnt (7). The gates of the first two FET's (M1,M2) are connected to the first node and the gates of the second two FET's (M3,M4) to the second node, and there is an output terminal (5). In addition, a second resistance (R1) is connected to the third node and the second potential supply point. All the FET's operate in the saturation region, while the output terminal is connected to the first or the second node. ADVANTAGE - Improve sensitivity, so that it can be integrated on smallest possible surface.