| 摘要 |
A schottky diode manufacturing process employing diamond film comprises forming a boron-doped p-type polycrystalline diamond film on a low-resistance p-type silicon substrate by CVD using a source gas consisting of CH4, H2 and B2H6, forming an ohmic contact on the back of the p-type silicon substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the boron doped p-type polycrystalline diamond film. The boron/carbon concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.
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