发明名称 |
Technique for producing antireflection grating surfaces on dielectrics, semiconductors, and metals |
摘要 |
A method of forming an antireflection rectangular-groove surface-relief grating on a lossy substrate exposed to incident waves of transverse electric or transverse magnetic or combination of polarizations and any angle of incidence in a lossless medium. The required thickness and complex refractive index of a single homogeneous layer on a lossy substrate to produce zero reflectivity is first computed using an impedance matching approach. The filling factor and groove depth of the rectangular groove surface-relief grating that is equivalent to the single homogeneous layer in the long-wavelength limit are then calculated. The surface-relief grating is then formed on the lossy substrate by reactive ion etching, electron beam lithography, or holography.
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申请公布号 |
US5007708(A) |
申请公布日期 |
1991.04.16 |
申请号 |
US19880224571 |
申请日期 |
1988.07.26 |
申请人 |
GEORGIA TECH RESEARCH CORPORATION |
发明人 |
GAYLORD, THOMAS K.;GLYTSIS, ELIAS N.;MOHARAM, M. GAMAL;BAIRD, WILLIAM E. |
分类号 |
G02B5/18;G02B6/124;G03F7/00 |
主分类号 |
G02B5/18 |
代理机构 |
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地址 |
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