发明名称 Technique for producing antireflection grating surfaces on dielectrics, semiconductors, and metals
摘要 A method of forming an antireflection rectangular-groove surface-relief grating on a lossy substrate exposed to incident waves of transverse electric or transverse magnetic or combination of polarizations and any angle of incidence in a lossless medium. The required thickness and complex refractive index of a single homogeneous layer on a lossy substrate to produce zero reflectivity is first computed using an impedance matching approach. The filling factor and groove depth of the rectangular groove surface-relief grating that is equivalent to the single homogeneous layer in the long-wavelength limit are then calculated. The surface-relief grating is then formed on the lossy substrate by reactive ion etching, electron beam lithography, or holography.
申请公布号 US5007708(A) 申请公布日期 1991.04.16
申请号 US19880224571 申请日期 1988.07.26
申请人 GEORGIA TECH RESEARCH CORPORATION 发明人 GAYLORD, THOMAS K.;GLYTSIS, ELIAS N.;MOHARAM, M. GAMAL;BAIRD, WILLIAM E.
分类号 G02B5/18;G02B6/124;G03F7/00 主分类号 G02B5/18
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