| 摘要 |
<p>PURPOSE:To facilitate etching and to prevent a source drain contact and a field shield electrode from shorting by etching it so that the etching face may be tapered, and forming an Si3N4 film thin at the surface of a CVD-SiO2 film after formations of a polysilicon gate electrode, and a source and a drain. CONSTITUTION:An SiO2 film 5 is formed on a silicide film 4, and the part on the active region of resist is removed. With the left resist as a mask, the CVD-SiO2 film 5 is wet-etched with buffer hydrofluoric acid. The etching face becomes tapered. Next, a silicide film 4 is etched anisotropically, and an Si3N4 film 3 and an SiO2 film 2 are etched at a time. Next, a gate oxide film 6 is formed, and on this, a polysilicon layer 7 for gate electrode is formed, and the polysilicon layer 7 and the gate oxide film 6 are patterned, and ion implantation is done to a source and a drain, and only the part for making the contact of the silicide film 4 of the CVU-SiO2 film 5 is removed by etching so as to form an Si3N4 film on the CVD-SiO2 film 5.</p> |
