Crimp-type power semiconductor device.

摘要

A crimp-type semiconductor device is provided with a semiconductor substrate (20) having a lifetime-controlled region (43). This lifetime-controlled region (43) is in the form of a ring, and the lifetime of the minority carriers is shortened in the region. Second-conductivity type impurity regions (21d), which serve as emitter layers, are formed on the semiconductor substrate (20) such that they provide a plurality of concentric arrays. The inner diameter of the ring-like lifetime-controlled region (43) is longer than the diameter of an enveloping circle which is obtained by connecting the radially-inner ends of the impurity regions (21d) of the outermost array.