发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a crack from being generated in the base of a bonding pad by a method wherein a plurality of grooves are formed in the surface of the bonding pad. CONSTITUTION:A bonding pad is formed on a base insulating film 5, a bonding pad window 2 is formed into a square of one side of about 100mum and a bonding pad electrode 1 is formed of an Al-silicon-copper alloy film of a thickness of about 1mum. Grooves 3, which are respectively about 1.5mum in width and is about 0.5mum in depth, are formed in the surface of the Al electrode 1 in every about 10mum. These grooves 3 are formed by etching partially the to electrode by a photolithography dry etching method and have almost a vertical sectional form. The width of the grooves 3 is selected in such a way that when gold wires are pressed to the pad and ultrasonic vibrations are applied, the surface of the Al electrode is crushed and becomes almost smooth. Moreover, the depth of the grooves 3 is selected in such a way that damage does not enter the film 5.
申请公布号 JPH0383352(A) 申请公布日期 1991.04.09
申请号 JP19890220774 申请日期 1989.08.28
申请人 MATSUSHITA ELECTRON CORP 发明人 UMEMOTO TOSHIAKI
分类号 H01L21/60 主分类号 H01L21/60
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