| 摘要 |
PURPOSE:To enable a desired part to be changed into a superconductive phase by cladding a material thin film including a material to be changed into the superconductive phase at a desired part of a superconductive composition thin film in non-superconductive phase state on the surface of an insulating substrate and then by performing heat treatment. CONSTITUTION:A superconductive composition film with at least a superconductive phase, a semiconductor phase, and an insulation phase at the same composition system, namely a BiSrCaCu oxide thin film 2 in amorphous state, is formed from a sintered target on the surface of a substrate 1. The BiSrCaCu oxide thin film 2 shows a semiconductor state when Bi is in shortage. Bi2O3 3, 3 supplying Bi which is in shortage are clad to this thin film 2 with a fine gap. Then, the substrate 1 where the thin films 2 and 3 are formed is subjected to heat treatment within an electrical furnace, thus forming a superconductive thin film 4. In this case, Bi allows Bi of the thin film 3 to be introduced into the thin film 2 which is in shortage, thus enabling the thin film 2 to be superconductive, and then at the same time achieving crystallization of the thin film 2 from an amorphous stage.
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