| 摘要 |
PURPOSE:To reduce crystal defect and low temperature leakage failure by omitting, only on the drain side, As doping which forms an N<+>-diffusion area of a static RAM oxide film transistor. CONSTITUTION:A thick isolation oxide film 4 and a thin gate oxide film 5 which holds the former film therebetween are formed on a P-type Si substrate 3, and a polycrystalline Si film 6 by a CVD process and a high melting point metal film 7 by sputtering and deposited and laminated on the whole surface including the isolation oxide film and the thin gate oxide film 5. Then, a laminate comprising the films and 7 is kept behind between the film 4 and 5 and the others are removed by etching by an RIE process. Further, P ions 8 are doped with the laminate as a mask to form an ion doped layer on opposite sides of the laminate, and the side surfaces of the laminate is covered with an oxide film 9, and further a resist 109 is provided up to the middle of the laminate including the film 4. Thereafter, As ions 9 are doped using the film 4 as a mask and heat-treated to diffuse the previously doped P ions 9 and the presently doped As ions 10. A drain is therefore constructed with an N<->- diffusion layer 13 and a source side with a diffusion layer 12 comprising N<-> and N<+>. |
