发明名称 |
Semiconductor heterojunction structure. |
摘要 |
<p>A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.</p> |
申请公布号 |
EP0420188(A1) |
申请公布日期 |
1991.04.03 |
申请号 |
EP19900118470 |
申请日期 |
1990.09.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KIMOTO, TSUNENOBU, C/O ITAMI WORKS OF;TOMIKAWA, TADASHI, C/O ITAMI WORKS OF;FUJITA, NOBUHIKO, C/O ITAMI WORKS OF |
分类号 |
H01L29/47;H01L33/00;H01L33/32;H01L33/34;H01L33/40 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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