| 摘要 |
PURPOSE:To improve mass productivity and luminous efficiency of the title device by providing an InGaAsP layer having the same composition as that of an active layer and undoped on a boundary between a P-type InGaAsP active layer and an N-type InP clad layer, diffusing Zn in the active layer into the undoped layer during liquid phase epitaxial growth, and then forming an effective thickness of the active layer. CONSTITUTION:An N-type InP clad layer 2, an undoped InGaAsP layer 3, a P-type InGaAsP layer 4, a P-type InP clad layer 5 and a P-type InGaAsP cap layer 6 are sequentially formed on an N-type InP substrate, an oxide film 7 is further formed on the layer 6 except a circular region M, and a P-type side electrode 8 is then formed thereon. Here, Zn of P-type dopant in the layer 4 is diffused in the layer 3 during liquid phase epitaxial growth of the layer 2, 3, 4, 5, 6. In this case, a distance between the PN junction and the active layer can be largely shortened to improve confinement efficiency of carriers in the active layer, thereby improving the luminous efficiency of an element. |
