| 摘要 |
PURPOSE:To simplify peripheral circuits and to improve the sensitivity of the X-ray detector by measuring an output obtained from a semiconductor photodetecting element arranged on the back of an X-ray filter with a specific thickness. CONSTITUTION:A photodiode 6 to be the semiconductor photodetecting element is arranged on the back of the X-ray filter 3 thinner than thickness (d) based upon the shown equation I. The X-ray detector 5 can be used for X rays whose wavelength is >= 100Angstrom . Consequently, the peripheral circuits can be simplified and the sensitivity of the detector can be improved by one or two digits. In the equation, (d) is the thickness of the X-ray filter 3, lambda is the wavelength of detected X rays and (k) is the imaginary number part of the complex index of refraction of a substance constituting a filter.
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