| 摘要 |
PURPOSE:To prolong the life and improve the recording sensitivity of a recording component by a method wherein a compound composing a recording layer consists of Ib-IIIb-IVb2 or IIb-IVb-Vb2, and crystal variation thereof consists of a phase transition between a chalcopyrite structure and a zinc blende structure. CONSTITUTION:An optical information recording component has a recording layer composed of a compound of which a crystal structure is varied when irradiated by optical beams, and can record and erase information by variation of the crystal structure of this compound. The compounds in the recording layer are Ib-III-b-IVb2 or IIb-IVb-Vb2, and the crystal structure variation thereof is a phase transition between a chalcopyrite structure and a zincblende structure. Such a crystal structural transition improves recording sensitivity of a phase variation type recording material and can make it have long life. Further, 700 to 2000Angstrom should be preferable as a film thickness of the recording layer, and beams of a small compact semiconductor are optimum when attached to a drive as an electromagnetic wave to be used for recording, reproducing, and erazing. |
