| 摘要 |
PURPOSE:To reduce leak current by forming a high concentrated impurity layer of second conductivity type in a second conductivity type layer between junction and a gettering layer. CONSTITUTION:In a semiconductor device having a junction of first and second conductivity type layer 2, 3 in a semiconductor substrate 1 and a gettering layer 4, a highly concentrated impurity layer 5 of second conductivity type is formed in the second conductivity type layer 3 between the junction and the getting layer 4. The concentration of impurity at this time is 10 times of higher than the concentration of the second conductivity type layer 3 forming the junction. In addition, such constitution is made that a first conductivity type layer 6 which can apply voltage to a part of the second conductivity type layer 3 between the junction and the getting layer 4 is formed. Further such constitution is made that the getting layer 4 is embedded in the first conductivity type layer 6 which can apply voltage formed in a part of the second conductivity type layer 3 forming the junction. A semiconductor layer 7 having band gap, different from that of the semiconductor substrate 1 where the junction is formed, is further formed between the junction and the gettering layer 4. Thus diffusion of a small number of carriers into the junction can be suppressed, resulting in the reduction of leak current at high temperature. |
