| 摘要 |
<p>The invention provides a static inverter-type TTL/CMOS level translator including transistors (Q2 & Q5) to suppress hot electron effects. The transistors limit maximum VDS to VCC-VTN at the first and second gain stages. Resistors (R1 & R2) serve as a virtual VCC modulator to minimize voltage variations, stabilizing the VIL/VIH trip point. The resistors (R1 & R2) also minimize standby current so that the translator can be used in a low standby current environment. The translator provides faster speed, wider process margins, better reliability and lower standby current than prior art translators.</p> |
