| 摘要 |
PURPOSE:To improve the degree of smoothness of the surface of a chamfered section by a method wherein the semiconductor wafer, on which chamfer section is formed on both surfaces of its outer circumference, and the spacer consisting of etchant-resisting material are alternately superposed, and the chamfering part is brought into contact with the etchant. CONSTITUTION:Chamfer parts 2 are formed by grinding the outer circumference of the disc-like cross section 1 of silicon wafers A, and a grinding distortion is formed at that time. The surface treatment of the above-mentioned wafers A is conducted in such a manner that a plurality of the wafers A and spacers 5 are laminated alternately, and an etchant is brought into contact with the chamfer part of each wafer A. The spacers 5 are made of the synthetic resin material which is resistive to an etchant (a), and its diameter is set larger than the diameter of the cross section 1 of the wafers A, but it is desirable that the diameter of the spacer 5 is formed same as that of the wafers A. By using the above-mentioned method, if there is a defect such as a slip exposed to the surface of the chamfer section through the wafer-to-wafer contacting part, the wafer is deeply scraped out by intense reaction, and the transfer of a wafer A to other wafer A can be prevented by the spacer 5.
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