| 摘要 |
<p>PURPOSE:To provide a sample holder which is superior in general applicability and is used to the wide extent of a temperature region by allowing a part that is in contact with a carried sample to be made of ceramic or a high melting metal, and or the compound of the high melting metal. CONSTITUTION:In the mainframe 1 of a holder, a ringshaped sample stage 3 is fitted between a heater 2 and a pointed end. Being composed of nitride titanium, titanium tungsten, tungsten silicide, silicon carbide, and the like which are used as barrier metals in the manufacturing processes of ceramics and a semiconductor integrated circuit device, layers 6a and 6b are deposited at a stepped part 3b that is in contact with the sample 5 on the sample stage 3 and at the pointed end 4b of a screw lid 4 as stable coating layers in which any alloyed reaction does not take place even at a high temperature of the order of 950 deg.C to the semiconductor and the like, i.e., the sample 5. These coating layers 6a and 6b are formed by treatment, e.g. sputtering and the like.</p> |
