| 摘要 |
<p>PURPOSE:To set an electric field given to a tunnel film to be an appropriate value by providing a circuit that can change the value of a write voltage, which is generated at the internal part of the device and that stores it on a non- volatile basis. CONSTITUTION:The circuit 20 which can change the write voltage Vb generated at the internal part of the device and which stores it on the non-volatile basis is provided. Write data are written into storage elements M1-Mi in accordance with film thickness data of the tunnel film, and storage data of the storage elements M1-Mi are read, whereby a clamping voltage Vb is controlled. When the tunnel film is thick, the write voltage Vb is raised. When the tunnel film is thin on the other hand, the write voltage Vb is dropped so as to set the intensity of the electric field given to the tunnel film to be appropriate.</p> |
