| 摘要 |
<p>PURPOSE:To suppress the dispersion of a diode element area and to equalize the diode element characteristic by forming a dummy pattern consisting of a semiconductor film on a picture element electrode. CONSTITUTION:A semiconductor film 25 is provided with an intrinsic semiconductor whose conductive type is a (p) type and an (i) type, that is, which scarcely contains impurities, and a diode structure of an (n) type from a transparent conductive film 13 side. In this state, a photosensitive material is formed on the whole surface, exposure and development are executed and a photoresist 17 is formed. A plane pattern shape of this photoresist 17 is shown with a chain line 47. Thereafter, the photoresist 17 is used as a mask of etching, and by anisotropic ion etching using, for instance, a reactive ion etching device as dry etching, the semiconductor film 25 is brought to etching and a semiconductor layer 27, and a dummy pattern 29 on a picture element electrode 23 are formed. In such a way, the end point of etching can be detected surely, the dispersion of a diode element area is suppressed, and a diode having a uniform characteristic is obtained.</p> |
