| 发明名称 |
Schottky barrier height for metal contacts to III-V semiconductor compounds |
| 摘要 |
A metal to semiconductor contact is provided wherein the Schottky barrier height is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on gallium arsenide.
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| 申请公布号 |
US4999685(A) |
申请公布日期 |
1991.03.12 |
| 申请号 |
US19890353271 |
申请日期 |
1989.05.16 |
| 申请人 |
UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
WALDROP, JAMES R.;GRANT, RONALD W. |
| 分类号 |
H01L29/47 |
主分类号 |
H01L29/47 |
| 代理机构 |
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代理人 |
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| 主权项 |
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